features r ds(on) (max 0.24 ? )@v gs =10v gate charge (typical 130nc) improved dv/dt capability high ruggedness 100% avalanche tested r ds(on) = 0.24 ohm i d = 20a bv dss = 500v { { { ? { { { ? 2. drain 3. source 1. gate ? 20N50B pb free plating product 20N50B pb 20a,500v heatsink n-channel type power mosfet to-3pb 1 2 3 general description this n-channel enhancement mode field-effect power transistor using thinki semiconductor advan ced planar stripe, dmos technol- ogy intended for off-line switch mode power supply. also, especially designed to minimize rds(on) and high rugged avalanche characteristics. the to-3pb pkg is well suited for adaptor power unit and small power inverter application. ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/6 rev.05 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 20 a - continuous (t c = 100c) 12.5 a i dm drain current - pulsed (note 1) 80 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1050 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 23.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 235 w - derate above 25c 1.88 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.53 c / w r cs thermal resistance, case-to-sink 0.24 -- c / w r ja thermal resistance, junction-to-ambient -- 40 c / w symbol parameter value units
(note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 5.1mh, i as = 20a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 20a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.55 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 10 a v ds = 400 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10.0 a -- 0.2 0.24 ? g fs forward transconductance v ds = 50 v, i d = 10.0 a -- 18 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 4590 6000 pf c oss output capacitance -- 380 460 pf c rss reverse transfer capacitance -- 60 80 pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 20 a, r g = 25 ? -- 50 120 ns t r turn-on rise time -- 150 310 ns t d(off) turn-off delay time -- 380 770 ns t f turn-off fall time -- 180 370 ns q g total gate charge v ds = 400 v, i d = 20 a, v gs = 10 v -- 130 170 nc q gs gate-source charge -- 20 -- nc q gd gate-drain charge -- 45 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 20 a i sm maximum pulsed drain-source diode forward current -- -- 80 a v sd drain-source diode forward voltage v gs = 0 v, i s = 20 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 20 a, di f / dt = 100 a/ s -- 480 -- ns q rr reverse recovery charge -- 7.7 -- c ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/6 rev.05 ? 20N50B
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 102030405060708090 0.0 0.2 0.4 0.6 0.8 1.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage 0306090120150 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 20.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 2000 4000 6000 8000 10000 c oss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 2. transfer characteristics figure 1. on-region characteristics figure 4. body diode forward voltage variation with source current and temperature ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/6 rev.05 ? 20N50B
25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ ] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.53 /w m ax. 2. d uty factor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 20.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] p dm t 1 t 2 p dm t 1 t 2 t 1 t 2 figure 8. on-resistance variation vs temperature ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 4/6 rev.05 ? 20N50B
charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 5/6 rev.05 ? 20N50B
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 6/6 rev.05 ? 20N50B
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